Intense femtosecond photoexcitation of bulk and monolayer MoS2

被引：53

作者：

Paradisanos, I. ^{[1
,2
]}

Kymakis, E. ^{[3
,4
]}

Fotakis, C. ^{[1
,2
]}

Kioseoglou, G. ^{[5
]}

Stratakis, E. ^{[1
,5
]}

机构：

[1] Fdn Res & Technol Hellas FORTH, IESL, Iraklion 71003, Greece

[2] Univ Crete, Dept Phys, Iraklion 71003, Greece

[3] Technol Educ Inst TEI Crete, Ctr Mat Technol & Photon, Iraklion 71003, Greece

[4] Technol Educ Inst TEI Crete, Dept Elect Engn, Iraklion 71003, Greece

[5] Univ Crete, Mat Sci & Technol Dept, Iraklion 71003, Greece

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 04期

关键词：

ABSORPTION;

D O I：

10.1063/1.4891679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on silicon oxide is studied. Optical, field emission scanning electron microscopy and Raman microscopy were used to quantify the damage. The intensity of A(1g) and E-2g(1) vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking and subsequent atoms removal due to electronic excitations. The single-pulse optical damage threshold was determined for the monolayer and bulk under 800 nm and 1030 nm pulsed laser irradiation, and the role of two-photon versus one photon absorption effects is discussed. (C) 2014 AIP Publishing LLC.

引用

页数：5

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