Circuit Reliability Comparison Between Stochastic Computing and Binary Computing

被引:8
|
作者
Zhang, Zuodong [1 ]
Wang, Runsheng [1 ]
Zhang, Zhe [1 ]
Zhang, Yawen [1 ]
Guo, Shaofeng [1 ]
Huang, Ru [1 ]
机构
[1] Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China
关键词
Aging; Integrated circuit reliability; Integrated circuit modeling; Stochastic processes; Transistors; Computational modeling; Reliability-enhanced design; NBTI; stochastic computing; reliability simulation; FinFET; frequency guardband; AGING SENSOR;
D O I
10.1109/TCSII.2020.2993273
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reliability-enhanced circuit design is increasingly demanded due to severer transistor aging and variations at nanoscale. In this brief, new insights of inherently enhancing reliability are presented, based on the emerging computing paradigm of stochastic computing (SC). A new cross-layer reliability simulation flow supporting statistical static timing analysis (SSTA) is proposed, with a new long-term compact transistor aging model validated by 16/14nm FinFET experimental data. Then, the reliability of SC circuits in practical applications is investigated and compared with that of conventional binary circuits, for the first time. The results indicate that, the performance of SC circuits is intrinsically resistant to aging and variations ascribed to the circuit topology and the probability encoding. It suggests that, SC can provide more relaxed circuit design margins, offering promises to the application of emerging nanodevices in the future.
引用
收藏
页码:3342 / 3346
页数:5
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