Adsorption, diffusion and desorption of Cl atoms on Si(111) surfaces

被引：17
|
作者：
Sakurai, S [1 ]
Nakayama, T [1 ]
机构：
[1] Chiba Univ, Fac Sci, Dept Phys, Inage Ku, Chiba 2638522, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷
关键词：
surface processes; chloride vapor deposition processes semiconducting silicon;
D O I：
10.1016/S0022-0248(01)01904-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The fundamental processes of SiCl2 desorption from Si(1 1 1) surfaces are investigated, by using the first-principles pseudopotential method in a local density approximation. It is shown that the surface diffusion of Cl and SiCl Units have a small activation barrier around 0.9 eV. while the Formation and the evaporation of SiCl, have a large activation energy around 2.1 eV. The rate equations based on these energies Clarify that the desorption is a second order process of chloride coverage made up of two successive reactions. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：212 / 216
页数：5
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