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Nonlinear spatio-temporal dynamics in semiconductors

被引：0
|
作者：
Schöll, E [1 ]
机构：
[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany
来源：
BRAZILIAN JOURNAL OF PHYSICS | 1999年 / 29卷 / 04期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We review recent theoretical advances in the modeling and computer simulation of complex nonlinear spatio-temporal dynamics of charge carriers in semiconductors. Among the particularly instructive examples are investigations of current filaments in doped semiconductors in the regime of low temperature impurity breakdown. The nascence of current filaments in thin GaAs films with different contact geometries, including circular samples (Corbino disks) with symmetry breaking instabilities, is investigated, and the role of global couplings induced by the operating load circuit is analysed.
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页码：627 / 638
页数：12
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