Modeling and design of Al0.25Ga0.75As/GaAs terahertz quantum cascade lasers with a realistic band structure

被引：0
|
作者：
Strupiechonski, Elodie [1 ,5 ]
Galinski, Henning [1 ,4 ]
Gonzalez, Maura [5 ]
Blanchard, Romain [1 ]
Bell, David C. [1 ,2 ]
Linfield, Edmund H. [3 ]
Capasso, Federico [1 ]
机构：
[1] Harvard Univ, Harvard John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Harvard Univ, Ctr Nanoscale Syst, Cambridge, MA 02138 USA
[3] Univ Leeds, Sch Elect & Elect Engn, Leeds, W Yorkshire, England
[4] Swiss Fed Inst Technol, Lab Nanomet, Zurich, Switzerland
[5] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Queretaro, Mexico
来源：
2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Three dimensional chemical and structural information from an Al0.25Ga0.75As/GaAs terahertz quantum cascade laser heterostructure obtained by atom probe tomography is used to demonstrate the impact of diffusion-induced chemical roughening of the AlGaAs barrier layers on the optoelectronic characteristics of the laser by recalculating the band structure of the QCL and comparing the relevant parameters with the ones from the nominal structure and finally an optimized structure is proposed.
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页数：2
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