Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

被引：26
|
作者：
Bisi, Davide [1 ]
De Santi, Carlo [1 ]
Meneghini, Matteo [1 ]
Wienecke, Steven [2 ]
Guidry, Matt [2 ]
Li, Haoran [2 ]
Ahmadi, Elaheh [2 ]
Keller, Stacia [2 ]
Mishra, Umesh K. [2 ]
Meneghesso, Gaudenzio [1 ]
Zanoni, Enrico [1 ]
机构：
[1] Univ Padua, Dept Informat Engn, I-35122 Padua, Italy
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 07期
关键词：
GaN; HEMT; N-polar; hot-electron; impact ionization; ALGAN/GAN HEMTS; TRANSISTORS;
D O I：
10.1109/LED.2018.2835517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter reports on the observation of hot-electron and impact-ionization mechanisms in N-polar GaN-based MIS-HEMTs designed for high frequency (RF) operation. Thanks to the extremely low gate leakage of such devices, we were able to demonstrate-for the first time-a correlation between electroluminescence (EL) and gate current in the semi-on state. In the semi-on state, the devices show a non-monotonic, bell-shaped behavior of the EL-versus-V-GS and of the I-G-versus-V-GS characteristics, and the intensity of the EL signal is proportional to the I-G x I-D product. The results are experimental evidence for impact ionization: the related mechanisms are described in detail in the letter.
引用
收藏
页码：1007 / 1010
页数：4
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