EEG-based Time and Spatial Interpretation of Activation Areas for Relaxation and Words Writing between Poor and Capable Dyslexic Children

被引:0
|
作者
Mohamad, N. B. [2 ]
Lee, Khuan Y. [1 ,2 ]
Mansor, W. [1 ,2 ]
Mahmoodin, Z. [3 ]
Fadzal, C. W. N. F. C. W. [2 ]
Amirin, S. [4 ]
机构
[1] Univ Teknol MARA, Computat Physiol Detect RIG, Brain & NeuroSci Communities Res, Shah Alam, Malaysia
[2] Univ Teknol MARA, Fac Elect Engn, Shah Alam, Malaysia
[3] Univ Kuala Lumpur, British Malaysian Inst, Med Engn Technol Sect, Kuala Lumpur, Malaysia
[4] Dyslexia Assoc Ctr, Kuala Lumpur, Malaysia
关键词
PARIETAL CORTEX; SYNCHRONIZATION;
D O I
暂无
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
Symptoms of dyslexia such as difficulties with accurate and/or fluent word recognition, and/or poor spelling as well as decoding abilities, are easily misinterpreted as laziness and defiance amongst school children. Indeed, 37.9% of 699 school dropouts and failures are diagnosed as dyslexic. Currently, Screening for dyslexia relies heavily on therapists, whom are few and subjective, yet objective methods are still unavailable. EEG has long been a popular method to study the cognitive processes in human such as language processing and motor activity. However, its interpretation is limited to time and frequency domain, without visual information, which is still useful. Here, our research intends to illustrate an EEG-based time and spatial interpretation of activated brain areas for the poor and capable dyslexic during the state of relaxation and words writing, being the first attempt ever reported. From the 2D distribution of EEG spectral at the activation areas and its progress with time, it is observed that capable dyslexics are able to relax compared to poor dyslexics. During the state of words writing, neural activities are found higher on the right hemisphere than the left hemisphere of the capable dyslexics, which suggests a neurobiological compensation pathway in the right hemisphere, during reading and writing, which is not observed in the poor dyslexics.
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页码:4757 / 4760
页数:4
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