Temperature Dependent Performance Of Al/ZnCdS Schottky Diode And Charge Transport Analysis

被引：1
|
作者：
Das, Mrinmay [1 ]
Datta, Joydeep [1 ]
Dey, Arka [1 ]
Jana, Rajkumar [1 ]
Ray, Partha Pratim [1 ]
机构：
[1] Jadavpur Univ, Dept Phys, Kolkata 700032, India
来源：
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015) | 2016年 / 1728卷
关键词：
D O I：
10.1063/1.4946116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Here we report the temperature dependent behaviour of Al/ZnCdS interface. In this regard, ZnCdS nanocomposite was synthesized by hydrothermal technique. Detailed study of schottky parameters including rectification ratio, ideality factor, series resistance and barrier height was performed. We explored the underlying charge transport phenomena through the Metal-semiconductor (MS) interface with the help of space charge limited current(SCLC) theory. A compartive analysis of carrier mobility and diffusion length was done.
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页数：4
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