GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation

被引：0

作者：

Wang, Zhiwei ^{[1
]}

Wu, Zongheng ^{[1
]}

Chen, Cai ^{[1
]}

Kang, Yong ^{[1
]}

Yuan, Zhao ^{[2
]}

Luo, Fang ^{[3
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Elect & Elect Engn, Wuhan, Peoples R China

[2] Univ Arkansas, Coll Engn, Fayetteville, AR 72701 USA

[3] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

来源：

2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020) | 2020年

关键词：

half bridge multiplexing; DC bias magnetic; phase shift control; gallium nitride device;

D O I：

10.1109/apec39645.2020.9124549

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A four-switch Buck-Boost (FSBB) + half bridge LLC integrated two-stage DC-DC converter is analyzed and improved in this paper. This converter saves two power switches by half bridge multiplexing (HBM). The phase shift control strategy is proposed to eliminate DC bias magnetic of transformer and asymmetrical current of synchronous rectification MOSFETs caused by HBM. In addition, ZVS is achieved in FSBB stage. The operation principle and characteristics of the presented control strategy are analyzed in details, and verified on a 360V-440V input 24V/400W output experimental prototype. Power density and efficiency get higher by using GaN-based high electron mobility transistor (GaN-HEMT), which are up to 96.2% and 112W/in(3) respectively.

引用

页码：2219 / 2224

页数：6

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