Selective Scanning Tunnelling Microscope Electron-induced Reactions of Single Biphenyl Molecules on a Si(100) Surface

被引:26
|
作者
Riedel, Damien [1 ]
Bocquet, Marie-Laure [2 ]
Lesnard, Herve [2 ]
Lastapis, Mathieu [1 ]
Lorente, Nicolas [3 ]
Sonnet, Philippe [4 ]
Dujardin, Gerald [1 ]
机构
[1] Univ Paris Sud, Photophys Mol Lab, F-91405 Orsay, France
[2] Univ Lyon, CNRS, Ecole Normale Super Lyon, Chim Lab, F-69007 Lyon, France
[3] CSIC, ICN, Ctr Invest Nanociencia & Nanotecnol, Bellaterra 08193, Spain
[4] Univ Haute Alsace, LRC CNRS 7228, Inst Sci Mat Mulhouse, F-68093 Mulhouse, France
关键词
MANIPULATION; SILICON; PSEUDOPOTENTIALS; DISSOCIATION; NANOMACHINES; AZOBENZENE; DYNAMICS; TIP;
D O I
10.1021/ja8101133
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Selective electron-induced reactions of individual biphenyl molecules adsorbed in their weakly chemisorbed configuration on a Si(100) surface are investigated by using the tip of a low-temperature (5 K) scanning tunnelling microscope (STM) as an atomic size source of electrons. Selected types of molecular reactions are produced, depending on the polarity of the surface voltage during STM excitation. At negative surface voltages, the biphenyl molecule diffuses across the surface in its weakly chemisorbed configuration. At positive surface voltages, different types of molecular reactions are activated, which involve the change of adsorption configuration from the weakly chemisorbed to the strongly chemisorbed bistable and quadristable configurations. Calculated reaction pathways of the molecular reactions on the silicon surface, using the nudge elastic band method, provide evidence that the observed selectivity as a function of the surface voltage polarity cannot be ascribed to different activation energies. These results, together with the measured threshold surface voltages and the calculated molecular electronic structures via density functional theory, suggest that the electron-induced molecular reactions are driven by selective electron detachment (oxidation) or attachment (reduction) processes.
引用
收藏
页码:7344 / 7352
页数:9
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