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Technologies and modelling issues for tritium processing in the European Test Blanket Systems and perspectives for DEMO
被引:10
|作者:
Ricapito, I.
[1
]
Calderoni, P.
[1
]
Poitevin, Y.
[1
]
Aiello, A.
[2
]
机构:
[1] Fus Energy, ES-08019 Barcelona, Spain
[2] ENEA, I-40032 Bologna, Italy
关键词:
Test Blanket Module;
Breeding Blanket;
Tritium Technologies;
Tritium Transport Modelling;
DESIGN;
STRATEGY;
MODULES;
D O I:
10.1016/j.fusengdes.2013.12.028
中图分类号:
TL [原子能技术];
O571 [原子核物理学];
学科分类号:
0827 ;
082701 ;
摘要:
One of the main objectives of the experimental campaign on the Test Blanket Systems (TBS) in ITER is the demonstration of the efficient processing of the tritium generated in the Test Blanket Module (TBM). On the other side, efficient tritium processing in a TBS has deep implications on: (i) safe operation of TBS itself and whole ITER system; (ii) successful development and validation of tritium transport modelling codes; (iii) demonstration of DEMO relevancy of tritium processing technologies. This work describes various aspects of HCLL (Helium Cooled Lithium Lead) and HCPB (Helium Cooled Pebble Bed)-TBS activities related to TBS tritium management. After a short description of HCLL and HCPB blanket concepts and related TBS, the paper contains: 1. a presentation of the key tritium processing technologies in the current design baseline of the European TBS; 2. a discussion on the DEMO relevancy of some specific TBS tritium processing technologies; 3. an overview on the activities related to the tritium transport modelling tools that will be validated along the development of the TBM project, including experimental campaign in ITER, and used for supporting the DEMO Breeding Blanket design. These three items are connected each other since tritium-related data, generated through the experimental campaign in ITER and interpreted through suitable modelling tools, will be one of the most significant outcomes in support of the breeding blanket design for DEMO and beyond. (C) 2013 Elsevier B.V. All rights reserved.
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页码:1469 / 1475
页数:7
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