Demonstration of blue-ultraviolet avalanche photo-diodes of II-VI wide bandgap compounds grown by MBE

被引：7

作者：

Abe, T ^{[1
]}

Ishikura, H ^{[1
]}

Fukuda, N ^{[1
]}

Aung, ZM ^{[1
]}

Adachi, M ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Elect & Elect Dept, Fac Engn, Tottori 6808552, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnSe; photo-diode; blue-ultraviolet photodetector; APD operation; MBE;

D O I：

10.1016/S0022-0248(00)00289-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper presents the first demonstration of blue-ultraviolet avalanche photo-diode (APD) operation using II-VI wide bandgap semiconductor ZnSe, grown on GaAs substrate by molecular-beam epitaxy. With improving crystal quality on macroscopic defects as well as an effective mesa-etching technology, the p(+)-n structure ZnSe diode has shown a distinct APD operation with a large avalanche gain of G = 50 under high reverse bias of 27 V at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1134 / 1137

页数：4

共 29 条

[1] Blue-ultraviolet PIN structure photo-detectors of II-VI wide bandgap semiconductors grown by MBE
Ishikura, H
Fukuda, N
Okuno, Y
Gotoh, K
Kawamoto, S
Shirai, T
Abe, T
Kasada, H
Ando, K
BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 677 - 680
[2] MBE OF WIDE BANDGAP II-VI COMPOUNDS
GUNSHOR, RL
KOBAYASHI, M
KOLODZIEJSKI, LA
OTSUKA, N
NURMIKKO, AV
JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 390 - 398
[3] Highly efficient blue-ultraviolet photodetectors based on II-VI wide-bandgap compound semiconductors
Ando, K
Ishikura, H
Fukunaga, Y
Kubota, T
Maeta, H
Abe, T
Kasada, H
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 229 (02): : 1065 - 1071
[4] Review of wide bandgap II-VI compounds
Shionoya, Shigeo
Metals forum, 1991, 15 (02): : 132 - 142
[5] MOVPE and MBE of wide gap II-VI compounds
Gebhardt, W
Hahn, B
Reisinger, T
Kastner, MJ
Deufel, M
BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 33 - 37
[6] RECENT DEVELOPMENTS IN THE MBE GROWTH OF WIDE BANDGAP II-VI SEMICONDUCTORS FOR LASER-DIODES AND LEDS
QIU, J
CHENG, H
DEPUYDT, JM
HAASE, MA
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 279 - 286
[7] Transmutation doping of wide-bandgap II-VI compounds
Wienecke, M
Bollmann, J
Rohrich, J
Maass, K
Reinhold, B
ForkelWirth, D
JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 82 - 85
[8] Thin films of wide bandgap II-VI compounds grown by atomic layer epitaxy - Properties and application
Godlewski, M.
Szczerbakow, A.
Godlewski, M.M.
Journal of Wide Bandgap Materials, 2001, 9 (1-2): : 75 - 82
[9] New blue-ultraviolet PIN photodiodes of II-VI widegap compounds ZnSSe using p-type GaAs substrates grown by molecular beam epitaxy
Abe, T
Maeta, H
Naruse, J
Ikumi, K
Kubota, T
Fujiwara, T
Kasada, H
Ando, K
11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 1054 - 1057
[10] Blue-violet avalanche-photodiode (APD) and its ionization coefficients in II-VI wide bandgap compound grown by molecular beam epitaxy
Ishikura, H
Fukunaga, Y
Kubota, T
Maeta, H
Adachi, M
Abe, T
Kasada, H
Ando, K
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 229 (02): : 1085 - 1088

← 1 2 3 →