Anodic Dissolution of Si: Electrochemical Oscillations and Porous Silica Formation

被引:1
|
作者
Ozanam, F. [1 ]
Chazalviel, J. -N. [1 ]
机构
[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France
关键词
P-TYPE SILICON; NONRADIATIVE RECOMBINATION; INFRARED CHARACTERIZATION; INTERFACIAL OXIDE; FLUORIDE MEDIA; MECHANISM; SURFACE; MODEL; ELECTRODISSOLUTION; ANODIZATION;
D O I
10.1149/05037.0015ecst
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The behavior of a silicon electrode in fluoride electrolyte is reviewed. Special attention is directed to the electrochemical oscillations observed in the 3-10 V potential range, and to the formation of a mesoporous silica film above 10 V. The oscillatory phenomenon is shown to survive in this high-potential range. The physical mechanisms at the origin of the oscillation are discussed, in light of the various models proposed (stress-induced breakdown vs dielectric breakdown). The model of local oscillators appears as yet as the most suitable one to describe the transition from a resonant behavior to a macroscopic oscillation. Some directions for solving the pending issues are proposed.
引用
收藏
页码:15 / 24
页数:10
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