Characterization of ferroelectric SBT thin films prepared by sol-gel process

Ferroelectric Sr1-xBi2+xTa2O9 (0 less than or equal to x less than or equal to 0.3) solutions were synthesized using sol-gel process in which alkoxide precursors were used as starting materials. Thin films were coated on Pt/Ti/SiO2/Si substrates by spin-coating. Rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed in oxygen atmosphere. Pt top-electrode was deposited by sputtering and thin films were post-annealed to enhance electrical properties. Fluorite phase transformed to layered perovskite phase with annealing temperatures up to 700 degrees C. Desirable dielectric property was obtained at composition of Sr0.9Bi2.1Ta2O9. As the RTA temperature increase, the higher 2Pr values were obtained. At RTA temperature being 780 degrees C remanent polarization value of Sr0.9Bi2.1Ta2O9 thin film was 7.73 mu C/cm(2) and leakage current density value was 1.14 x 10(-7) A/cm(2) at 3 V.