On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals

被引：4
|
作者：
Gaidar, G. P. [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Nucl Res, UA-03680 Kiev, Ukraine
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 09期
关键词：
GERMANIUM; OXYGEN;
D O I：
10.1134/S1063782614090097
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Variations in the main electrical parameters of n-Ge single crystals with different doping levels under the effect of 60Co gamma-irradiation are investigated. A noticeable increase in the carrier mobility in the irradiated samples is observed in some dopant concentration range and the nature of this effect is explained. It is demonstrated that the electron-mobility variation under the action of gamma-irradiation in the initial n-Ge crystals with an oxygen impurity and in the annealed crystals have opposite signs. It is established that the oxygen complexes formed in the samples during annealing and the local lattice stresses near these complexes play a key role in the radiation-induced mobility increase. It is clarified that the radiation resistance of the electron mobility significantly depends on the crystallographic orientation of the investigated samples.
引用
收藏
页码：1141 / 1144
页数：4
相关论文
共 50 条
  • [1] On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals
    G. P. Gaidar
    Semiconductors, 2014, 48 : 1141 - 1144
  • [2] Tensoelectric properties irradiated by the fast electrons n-Ge single crystals
    Luniov, S. V.
    Khvyshchun, M. V.
    Zakharchuk, D. A.
    Maslyuk, V. T.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2023, 178 (9-10): : 1073 - 1080
  • [3] Electron Scattering for Uniaxially Deformed n-Ge Single Crystals
    Luniov, S. V.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (03)
  • [4] The impact of heat treatment on the magnetic sensitivity of irradiated by electrons single crystals n-Ge
    Luniov, S., V
    Zimych, A., I
    Khvyshchua, M., V
    Maslyuk, V. T.
    Megela, I. G.
    FUNCTIONAL MATERIALS, 2019, 26 (01): : 41 - 47
  • [5] THE IMPACT OF RADIATION DEFECTS ON THE MECHANISMS OF ELECTRON SCATTERING IN SINGLE CRYSTALS n-Ge
    Luniov, S. V.
    Zimych, A. I.
    Nazarchuk, P. F.
    Maslyuk, V. T.
    Megela, I. G.
    JOURNAL OF PHYSICAL STUDIES, 2015, 19 (04):
  • [6] Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals
    Luniov, S., V
    Nazarchuk, P. F.
    Zimych, A., I
    Udovytska, Yu A.
    Burban, O., V
    CONDENSED MATTER PHYSICS, 2019, 22 (01)
  • [7] Features of tensoresistance depending on the crystallographic orientation of γ-irradiated (60Co) germanium and silicon single crystals
    Gaidar, G. P.
    Baranskii, P. I.
    PHYSICA B-CONDENSED MATTER, 2017, 512 : 6 - 11
  • [8] FEATURES OF RADIATION-DEFECT ANNEALING IN n-Ge SINGLE CRYSTALS IRRADIATED WITH HIGH-ENERGY ELECTRONS
    Luniov, S., V
    Zimych, A., I
    Khvyshchun, M., V
    Maslyuk, V. T.
    Megela, I. G.
    UKRAINIAN JOURNAL OF PHYSICS, 2019, 64 (02): : 151 - 156
  • [9] Specific features of electron scattering in uniaxially deformed n-Ge single crystals in the presence of radiation defects
    Luniov, S. V.
    Zimych, A. I.
    Nazarchuk, P. F.
    Maslyuk, V. T.
    Megela, I. G.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2016, 171 (11-12): : 855 - 868
  • [10] INFLUENCE OF GAMMA IRRADIATION (60Co) ON THE ELECTROPHYSICAL PARAMETERS OF n-Ge WITH A DIFFERENT DOPING LEVEL AND WITH OXYGEN IMPURITY IN DIFFERENT STATES
    Gaidar, G. P.
    Baranskii, P., I
    JOURNAL OF PHYSICAL STUDIES, 2019, 23 (04):
12345