Compact, low threshold Nd3+:YVO4 self-Raman laser at 1178nm

被引:0
|
作者
Wang Bao-Shan [1 ]
Tan Hui-Ming
Gao Lan-Lan
Peng Ji-Ying
Miao Jie-Guang
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd3+:YVO4 self-Raman laser. The threshold is 370 mW at a pulse repetition frequency of 5 kHz. The maximum Raman laser output is 182 mW with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30 kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficieny is 13.5%.
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收藏
页码:2095 / 2097
页数:3
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