Acoustoelectric drag current in vanadium oxide films

被引:1
|
作者
Lapa, Pavel N. [1 ]
Kassabian, George [1 ]
Torres, Felipe [2 ,3 ]
Salev, Pavel [1 ]
Lee, Min-Han [1 ]
del Valle, Javier [1 ]
Schuller, Ivan K. [1 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] Univ Chile, Dept Phys, Santiago 7800024, Chile
[3] Estn Cent, Ctr Dev Nanosci & Nanotechnol, Santiago 9170124, Chile
关键词
ACOUSTIC SURFACE-WAVES; INSULATOR-TRANSITION; AMPLIFICATION;
D O I
10.1063/5.0015215
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO3 substrates. Coupling of acoustic waves propagating in LiNbO3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal-insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO2.
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页数:7
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