A C-Band GaN Single Chip Front-End for SAR Applications

被引：0

作者：

Giofre, R. ^{[1
]}

Ciccognani, W. ^{[1
]}

Colangeli, S. ^{[1
]}

Feudale, M. ^{[3
]}

Lanzieri, C. ^{[2
]}

Polli, G. ^{[2
]}

Salvucci, A. ^{[2
]}

Suriani, A. ^{[3
]}

Vittori, M. ^{[1
]}

Limiti, E. ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, EE Dept, Rome, Italy

[2] Leonardo Finmeccan, Rome, Italy

[3] Thales Alenia Space, Rome, Italy

来源：

2020 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS 2020) | 2020年

关键词：

Gallium Nitride; Single Chip Front-End; SAR; power amplifiers; LNA; switches;

D O I：

10.1109/rws45077.2020.9050088

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This paper describes the design and experimental characterization of a C-Band Gallium Nitride (GaN) Single Chip Front End (SCFE) designed for Synthetic Aperture Radar (SAR) systems. The SCFE is composed by a three stage High Power Amplifier (HPA), a Single Pole Double Throw switch (SPDT) and a three stage Low Noise Amplifier (LNA). The MMIC has been measured in both transmit and receive mode under small- and large-signal conditions showing interesting results. In particular, a small-signal gain around 35 dB with an associated noise figure of about 3.2 dB @T-amb in receive mode were achieved, whereas, in transmit mode, 46 dBm of output power and 30% of power added efficiency were obtained at the antenna port reference plane. The chip is optimized to work in the 5.25-5.57 GHz operating band and occupies an area of 7x7 mm(2).

引用

页码：162 / 164

页数：3

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