Beam current and source life enhancement of the Bernas ion source for the precision implant 9500xR and xR80

As part of a continuous improvement program, the Bernas ion source used in the Precision implant 9500xR and the xR80 high current implanters has been further developed. The enhancement involves optimising the position of the filament inside the are chamber and thus the plasma density distribution. This increases the extracted B, BF2, As and P ion beam currents by up to 50%. Source life tests have shown improved lifetime by up to 30%, since the source operates in a more efficient regime. A comparison between the standard source and the enhanced source will be presented, and the processes and mechanisms that limit source lifetime will be discussed.