Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy

被引：3
|
作者：
Li, W
Likonen, J
Haapamaa, J
Pessa, M
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
[2] Tech Res Ctr Finland, Chem Technol, VTT 02044, Finland
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期
关键词：
diffusion; beryllium; GaInP;
D O I：
10.1016/S0022-0248(99)00598-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The redistribution of Be during growth of GaInP layers by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry for the first time. Apparent Be diffusion occurs at doping level over 4 x 10(19) cm(-3) at growth temperature of 500 degrees C. At lower temperature the Be diffusion profile exhibits a significant increase of Be concentration and reduced diffusion. In contrast to Zn behavior in metalorganic vapor-phase epitaxy, no enhancement of Be redistribution in both GaInP and GaAs is observed by nearby highly n-type doped layers. Based on these results, a p(+)-n(+) GaInP tunnel diode with a high conductance of 15 mA/cm(2) at 1.7 mV has been achieved. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：459 / 462
页数：4
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