Synthesis of Heterojunction layers of Graphene/MoS2 and its characterization

被引：0
|
作者：
Tomar, Rupika Singh [1 ]
Taiwade, Kajol [1 ]
Ali, Javid [2 ]
Khan, Samina [3 ]
Haque, Fozia Z. [1 ]
机构：
[1] MANIT, Dept Phys, Opt Nanomat Lab, Ctr Nanosci & Engn, Bhopal 462051, MP, India
[2] Jamia Millia Islamia, Dept Phys, New Delhi 110025, India
[3] Jamia Millia Islamia, Ctr Nanosci, New Delhi 110025, India
来源：
INTERNATIONAL CONFERENCE ON SUSTAINABLE ENGINEERING AND TECHNOLOGY (ICONSET 2018) | 2018年 / 2039卷
关键词：
Application; Characterization; Heterojunction layer; Graphene; MoS2;
D O I：
10.1063/1.5079036
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
The synthesis of atomically thin layered MoS2/Graphene heterostructure is of great interest in optoelectronic devices because of their unique properties. Herein, we present a synthesis method to prepare heterostructure of MoS2/graphene using low pressure chemical vapor deposition. Atomic force microscopy, Raman spectra demonstrated that MoS2 film on graphene exhibited good thickness uniformity. This novel sensing structure based on a 2D heterostructure promises to provide a simple route to an essential sensing platform for wearable electronics.
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页数：4
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