The anisotropic magnetoresistance in epitaxial thin films and polycrystalline samples of La0.65Ca0.35MnO3

被引：15
|
作者：
Egilmez, M. [1 ]
Ma, Rongchao [1 ]
Chow, K. H. [1 ]
Jung, J. [1 ]
机构：
[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 07期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Metal insulator boundaries;
D O I：
10.1063/1.3056586
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report measurements of the anisotropic magnetoresistance (AMR) of epitaxial thin film and polycrystalline samples of La0.65Ca0.35MnO3. Near the metal-insulator transition (MIT) temperature the AMR of both polycrystalline and thin film samples exhibit a peak. However at temperatures well below the MIT, the AMR of the polycrystalline samples is much larger than that of the epitaxial films, suggesting that the anisotropy of the spin-polarized tunneling of the charge carriers across grain boundaries in a magnetic field is responsible for the observed low temperature behavior. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3056586]
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页数：3
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