A new epitaxial BaSnO3 buffer layer for YBa2Cu3O7-δ thin films on MgO substrates

被引：11

作者：

Mukaida, M ^{[1
]}

Takano, Y ^{[1
]}

Chiba, K ^{[1
]}

Moriya, T ^{[1
]}

Kusunoki, M ^{[1
]}

Ohshima, S ^{[1
]}

机构：

[1] Yamagata Univ, Yonezawa, Yamagata 9928510, Japan

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1999年 / 12卷 / 11期

关键词：

D O I：

10.1088/0953-2048/12/11/359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

45 degrees grain boundaries, which drastically increase surface resistance (R-S) in superconducting YBa2Cu3O7-delta films for microwave devices on MgO substrates, are eliminated using a new buffer layer of BaSnO3. BaSnO3 buffer layers and YBa2Cu3O7-delta films are grown by ArF pulsed laser deposition. Epitaxial relationships among BaSnO3, YBa2Cu3O7-delta and MgO are confirmed by x-ray phi-scanning. The Rs values of the YBa2Cu3O7-delta films are measured using a dielectric resonator with 22 GHz TE011 mode. The epitaxial YBa2Cu3O7-delta films grown on BaSnO3 buffered MgO substrates show lower R-S than YBa2Cu3O7-delta films directly grown on MgO substrates. The BaSnO3 buffer layer which enables YBa2Cu3O7-delta films to grow without 45 degrees grain boundaries at a optimum film growth condition is attractive for microwave applications.

引用

页码：890 / 892

页数：3

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