A time-dependent model for reactive sputter deposition

被引:45
|
作者
Strijckmans, K. [1 ]
Depla, D. [1 ]
机构
[1] Univ Ghent, Dept Solid State Sci, Res Grp DRAFT, B-9000 Ghent, Belgium
关键词
reactive sputtering; modeling; RSD2013; thin films; THIN-FILMS; TARGET; VOLTAGE; OXYGEN; GAS;
D O I
10.1088/0022-3727/47/23/235302
中图分类号
O59 [应用物理学];
学科分类号
摘要
A time-dependent, spatially resolved model (RSD2013) for dc reactive magnetron sputtering is proposed. The model includes several processes such as reactive gas chemisorption on the target and the substrate, direct and knock-on implantation of reactive species in the target, subsurface compound formation in the target, the deposition of sputter material on the substrate and redeposition of sputtered material back on to the target. A full derivation and motivation of the model is given. This formulation of the model is contained within the software RSD2013, a user-friendly simulation tool for the reactive sputter process. To demonstrate this tool, a time-dependent simulation of a realistic system with an increasing number of available RSD2013 options is discussed.
引用
收藏
页数:13
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