In-situ Characterization of 2D Materials for Beyond CMOS Applications

被引:0
|
作者
Wallace, Robert M. [1 ]
机构
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
关键词
ATOMIC LAYER DEPOSITION; HIGH-KAPPA DIELECTRICS; CONTACT RESISTANCE; GRAPHENE; METAL; PERFORMANCE;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
A resurgence in the investigation of 2D materials such as graphene and transition metal dichalcogenides for beyond CMOS device concepts emphasizes the importance of surface and interfacial reactions. A fundamental understanding of such reactions in the context of materials integration greatly benefits from in-situ characterization methods where processes such as surface cleaning, film deposition, and annealing can be simulated and subsequently correlated to device behavior. This talk will review our recent work on in-situ characterization of 2D materials in the context of device applications.
引用
收藏
页码:614 / 615
页数:2
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