Modeling of Graphene Nanoribbon Tunnel Field Effect Transistor in Verilog-A for Digital Circuit Design

Performance of graphene nanoribbon (GNR) tunnel field effect transistor (TFET) has been modeled in Verilog-Analog (Verilog-A) using previously reported physics based compact analytical current transport model. Performance obtained using both analytical model and Verilog-A simulations are compared providing excellent match. Using n-type and p-type GNR TFETs, inverter circuit is designed and simulated in Mentor Graphics (R) Tanner EDA S-Edit and T-Spice utilizing the developed Verilog-A codes. With suitable choice of supply voltage, our Verilog-A simulated GNR TFET inverter provides low propagation delay, low power dissipation and retains strong signal integrity.