Metal-insulator phase transition and topology in a three-component system*

被引:3
|
作者
Cheng, Shujie [1 ]
Gao, Xianlong [1 ]
机构
[1] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
band structures; high Chern numbers; bulk-edge correspondence; CHERN NUMBER; EDGE STATES; WAVE-FUNCTIONS; HALL; REALIZATION; MODEL; MATTER; GAS;
D O I
10.1088/1674-1056/abb305
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Due to the topology, insulators become non-trivial, particularly those with large Chern numbers which support multiple edge channels, catching our attention. In the framework of the tight binding approximation, we study a non-interacting Chern insulator model on the three-component dice lattice with real nearest-neighbor and complex next-nearest-neighbor hopping subjected to ?- or V-type sublattice potentials. By analyzing the dispersions of corresponding energy bands, we find that the system undergoes a metal-insulator transition which can be modulated not only by the Fermi energy but also the tunable extra parameters. Furthermore, rich topological phases, including the ones with high Hall plateau, are uncovered by calculating the associated band's Chern number. Besides, we also analyze the edge-state spectra and discuss the correspondence between Chern numbers and the edge states by the principle of bulk-edge correspondence. In general, our results suggest that there are large Chern number phases with C = +/- 3 and the work enriches the research about large Chern numbers in multiband systems.
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页数:7
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