A new low cost thick film metallization transfer process onto PDMS using a sacrificial copper seed

被引:2
|
作者
Hilbich, Daniel [1 ,3 ]
Khosla, Ajit [2 ]
Shannon, Lesley [3 ]
Gray, Bonnie L. [1 ]
机构
[1] Simon Fraser Univ, Sch Engn Sci, Microinstrumentat Lab, Burnaby, BC V5A 1S6, Canada
[2] Concordia Univ, Engn Sci, Montreal, PQ H4B 1R6, Canada
[3] Simon Fraser Univ, Sch Engn Sci, Reconfigurable Comp Lab, Burnaby, BC V5A 1S6, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
PDMS metallization; metallization transfer process; flexible electronics; electroplating; copper microcoils; MEMS; microactuators; FLEXIBLE SUBSTRATE; METAL PATTERN; FABRICATION; ELECTRONICS; CIRCUITS; CONTACT; DESIGN;
D O I
10.1117/12.2045228
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a new low cost microfabrication technology that utilizes a sacrificial conductive paint transfer method to realize thick film copper microstructures that are embedded in polydimethylsiloxane (PDMS). This process has reduced fabrication complexity and cost compared to existing metal-on-PDMS techniques, which enables large scale rapid prototyping of designs using minimal laboratory equipment. This technology differs from others in its use of a conductive copper paint seed layer and a unique transfer process that results in copper microstuctures embedded in PDMS. By embedding microstructures flush with PDMS surface, rather than fabricating the microstructures on the substrate surface, we produce a metallization layer that adheres to PDMS without the need for surface modifications. The fabrication process begins with the deposition of the seed layer onto a flexible substrate via airbrushing. A dry film photoresist layer is laminated on top and patterned using standard techniques. Electroplated copper is grown on the seed layer through the photoresist mask and transferred to PDMS through a unique baking procedure. This baking transfer process releases the electroplated copper from the seed layer, permanently embedding it into the cured PDMS without cracking or otherwise deforming it. We have performed initial characterizations of the copper microstructures in terms of feature size, film thickness, surface roughness, resistivity, and reliability under flexing. Initial results show that we can achieve films 25-75 micrometers in thickness, with reliable feature sizes down to 100 micrometers and a film resistivity of approximately 7.15 micro-Omega-cm. Process variants and future work are discussed, as well as large scale adaptations and rapid prototyping. Finally, we outline the potential uses of this technology in flexible electronics, particularly in high power applications.
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页数:15
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