SPICE modeling for RF kink effect in body contacted PD-SOI nMOSFETs

被引：0
|
作者：
Lee, Kiahn [1 ]
Lee, Seonghearn [1 ]
机构：
[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Global Campus 81, Yongin 17035, Gyeonggi Do, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2021年 / 63卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
body contact; parameter extraction; RF kink effect; RF SOI MOSFET; SPICE model;
D O I：
10.1002/mop.32695
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to simulate anomalous RF kink effect where S-21- and S-22-parameters in high-resistivity partially depleted silicon-on-insulator MOSFETs with body contact rotate clockwise in the lower and upper semicircles of Smith chart, respectively, a new SPICE BSIMSOI4 macro model including empirical voltage-dependent equations of current sources, inductance, capacitance, and resistance has been proposed. The accuracy of the empirical model is verified in the wide voltage range by comparing it with measured S-parameters from 0.01 to 15 GHz.
引用
收藏
页码：840 / 844
页数：5
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