Carrier trapping in the terahertz bow-tie diode based on AlGaN/GaN-heterostructures

被引：0
|
作者：
Pralgauskaite, Sandra [1 ]
Ikamas, Kestutis [1 ]
Matukas, Jonas [1 ]
Lisauskas, Alvydas [1 ]
Jakstas, Vytautas [2 ]
Janonis, Vytautas [2 ]
Kasalynas, Irmantas [2 ]
Prystawko, Pawel [3 ]
Leszczynski, Michal [3 ]
机构：
[1] Vilnius Univ, Inst Appl Electrodynam & Telecommun, Vilnius, Lithuania
[2] Ctr Phys Sci & Technol, Vilnius, Lithuania
[3] UNIPRESS, Inst High Pressure Phys, Warsaw, Poland
来源：
2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018) | 2018年
关键词：
detector; GaN; noise; THz; trap; NOISE; DEFECTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the low frequency noise characteristics of planar AlGaN/GaN bow-tie diodes designed for room temperature terahertz detection. These devices exhibit non-linear and asymmetric current-voltage characteristics, which were measured in the temperature range from 78 K to 338 K. The biased resistance showed time- dependent relaxation character with characteristic times ranging from several milliseconds to hundreds of seconds. Dynamics of electrical parameters originate from charge carrier trapping in the defects' formed centers with long characteristic times and is responsible for hysteresis observed in resistance-voltage characteristics. The low frequency noise spectroscopy performed in 10 Hz - 200 kHz frequency range indicates that defects with relaxation times from few microseconds to several milliseconds have activation energies in the range from 0.349 eV to 1.29 eV.
引用
收藏
页码：186 / 189
页数：4
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