Annealing induced defects in ZnO nanostructures

被引：11

作者：

Naeem-ur-Rehman ^{[1
,2
]}

Mehmood, Mazhar ^{[2
]}

Ali, Syed Mansoor ^{[3
]}

Ramay, Shahid M. ^{[3
]}

Shar, Muhammad Ali ^{[4
]}

AlGarawi, M. S. ^{[3
]}

机构：

[1] Khwaja Fareed Univ Engn & Informat Technol, Dept Phys, Rahim Yar Khan 64200, Pakistan

[2] PIEAS, Dept Met & Mat Engn, Natl Ctr Nanotechnol, Islamabad 45650, Pakistan

[3] King Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh, Saudi Arabia

[4] King Saud Univ, King Abdullah Inst Nanotechnol, POB 2454, Riyadh 11451, Saudi Arabia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 08期

关键词：

PHOTOLUMINESCENCE; TEMPERATURE; LUMINESCENCE; EMISSION; GREEN;

D O I：

10.1007/s00339-019-2802-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO nanostructures that do not exhibit defect-related PL emissions in the as-synthesized form have been exposed to annealing in air and argon environments at 500 degrees C for 2 h. That resulted in the appearance of some intrinsic defects in ZnO nanostructures. Morphology of the nanorods has also been affected by argon annealing. An intense luminescence peak appears in the PL spectra centred at 502 nm in samples annealed in argon. In contrast, the orange/red emission dominates the PL spectra of oxygen annealed nanostructures.

引用

页数：8

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