Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics

被引：57
|
作者：
Lu, Aixia [1 ,2 ,3 ]
Sun, Jia [1 ,2 ]
Jiang, Jie [1 ,2 ]
Wan, Qing [1 ,2 ,3 ]
机构：
[1] Hunan Univ, Key Lab Micro Nano Optoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期
基金：
中国科学院院长基金特别; 中国国家自然科学基金;
关键词：
aluminium; dielectric thin films; II-VI semiconductors; insulated gate field effect transistors; mesoporous materials; semiconductor thin films; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; GEL GATE DIELECTRICS; CAPACITANCE;
D O I：
10.1063/1.3294325
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature deposited 8.0 mu m-thick mesoporous SiO2 dielectric shows a huge electric double layer (EDL) gate specific capacitance (4.16 mu F/cm(2)). Battery drivable low-voltage (1.5 V) transparent EDL thin-film transistors (TFTs) with Al-doped ZnO nanocrystal channel layer gated by such dielectric are fabricated at room-temperature. The TFTs exhibit high-performance n-type transistor characteristics with a high field-effect mobility of 14.9 cm(2)/V s. The current on/off ratio and subthreshold gate voltage swing are estimated to be 2x10(6) and 82 mV/decade, respectively. Our results demonstrate that mesoporous SiO2 dielectrics with EDL effect are very promising for battery-powered portable transparent macroelectronics on temperature-sensitive substrates.
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页数：3
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