Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

被引：0
|
作者：
Sun, Ruize [1 ,2 ,3 ]
Liang, Y. C. [2 ,3 ]
Yeo, Yee-Chia [2 ]
Zhao, Cezhou [4 ]
Chen, Wanjun [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117580, Singapore
[3] Natl Univ Singapore, Suzhou Res Inst, Suzhou 215123, Peoples R China
[4] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou 215123, Peoples R China
来源：
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN; Au-free; DC-DC buck converter; integration; MIS-HEMT;
D O I：
10.1109/ispsd.2019.8757674
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, the GaN power IC platform is developed based on Au-free AlGaN/GaN MIS-HEMTs and a constant-output-ripple all GaN DC-DC buck converter IC is firstly realized with integrated gate driver, pulse width modulation (PWM) feedback control and over-current protection (OCP) circuits. The fabricated all GaN integrated DC-DC buck converter can realize stable 10 V output with constant output ripples when input voltage varies from 15 to 30 V. The output and ripples remain stable with varying load resistance. When subjected to over-current incident, the fabricated power IC can be protected according to desired over-current threshold values. The experiment results have demonstrated the functionality and feasibility of all GaN power ICs in power conversion applications.
引用
收藏
页码：271 / 274
页数：4
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