Characterization of a silicon pixel detector for imaging with low energy radiation

被引：3
|
作者：
Caria, M
Cadeddu, S
Lai, A
Sesselego, A
Quarati, F [1 ]
机构：
[1] Univ Cagliari, Dept Phys, Cagliari, Italy
[2] Ist Nazl Fis Nucl, Sez Cagliari, I-09042 Monserrato, CA, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 487卷 / 1-2期
关键词：
UV; silicon; photodetectors; responsivity; back-side illumination;
D O I：
10.1016/S0168-9002(02)00961-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We present tests on the characterization of a custom-made high sensitive UV silicon detector with 16,512 pixels and 3.8 cm x 2.8 cm active area. The structures were characterized for inter-pixel cross talk and dark current stability and responsivity at 260 nm of UV radiation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：170 / 174
页数：5
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