Electronic structure of (Tl0.125Pb0.875)Te

被引：9
|
作者：
Hase, I. [1 ]
Yanagisawa, T. [1 ]
机构：
[1] AIST, Nanoelectr Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2006年 / 445卷
关键词：
PbTe; Tl delta Pb1-delta Te; superconductivity; electronic structure; band structure calculation; negative U;
D O I：
10.1016/j.physc.2006.03.078
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present an ab-initio supercell calculation of electronic band structures of (Tl delta Pb1-delta)Te with delta = 0 and 0.125. PbTe is to be a very small gap semiconductor, and Tl doping induces a quasi-impurity band in this in-gap state. A local relaxation based on ionic model is discussed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：61 / 64
页数：4
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