Mechanisms of field emission from diamond films

被引:0
|
作者
Huang, QA [1 ]
Qin, M [1 ]
Zhang, B [1 ]
Sin, JKO [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, PEOPLES R CHINA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mechanisms for field emission from diamond films are analyzed in details. Diamond films for field emission may be modeled with three regions of interest: the substrate( Si or metal)-diamond interface, the diamond transport region, and the diamond-vacuum interface. Roles of the three regions are different. The substrate-diamond interface plays an important role in determining field emission from diamond particles on emitter tips; The diamond transport region is vital to field emission from undoped polycrystalline(or noncrystalline) and n-type doped diamond films, while the diamond-vacuum interface plays a role in determining field emission from p-type doped diamond films. Following these considerations, models for field emission from diamond particles and p-type diamond films are described and a model of the Poole-Frenkel effect with overlapping centers for field emission from undoped polycrystalline( or noncrystalline) and n-type doped diamond films is proposed.
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页码:300 / 304
页数:5
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