An experimental and modeling analysis of vapor transport deposition of cadmium telluride

被引:38
|
作者
Kestner, JM
McElvain, S
Kelly, S
Ohno, TR
Woods, LM
Wolden, CA [1 ]
机构
[1] Colorado Sch Mines, Dept Chem Engn, Golden, CO 80401 USA
[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA
[3] ITN Energy Syst, Littleton, CO 80127 USA
关键词
vapor transport deposition (VTD); cadmium telluride (CdTe); modeling; pressure;
D O I
10.1016/j.solmat.2004.02.013
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Vapor transport deposition (VTD) was employed for high-rate deposition of CdTe thin film solar absorbers. A detailed model was developed for CdTe deposition that included the role of source conditions, convective mass transport, and deposition chemistry. A Langmuir formulation that was consistent with experimental observations of resublimation was used to describe the surface reaction probability. Comparisons of experiment and model showed very good agreement over a range of operating conditions. The model predicts an optimum operating pressure for VTD, arising from a competition between surface kinetics and dilution of the precursor species. For VTD deposition of CdTe the optimum pressure is in the range of 2-5 Torr. These modeling concepts may be easily extended to VTD of other materials as well. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:55 / 65
页数:11
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