E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

被引:7
|
作者
Kainbayev, Nursultan [1 ,2 ]
Sriubas, Mantas [1 ]
Bockute, Kristina [1 ]
Virbukas, Darius [1 ]
Laukaitis, Giedrius [1 ]
机构
[1] Kaunas Univ Technol, Phys Dept, Studentu Str 50, LT-51368 Kaunas, Lithuania
[2] Al Farabi Kazakh Natl Univ, Dept Thermal Phys & Tech Phys, 71 Al Farabi Ave, Alma Ata 050040, Kazakhstan
关键词
co-doped zirconia; e-beam physical vapor deposition; thin films; ceramics; Raman spectroscopy; X-ray diffraction; IONIC-CONDUCTIVITY; ELECTRICAL-PROPERTIES; RAMAN-SCATTERING; ELECTROLYTE; CERIA; PHASE; OXYGEN; SC2O3; ALUMINUM; LAYER;
D O I
10.3390/coatings10090870
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scandia alumina stabilized zirconia (ScAlSZ) thin films were deposited using e-beam evaporation, and the effects of deposition parameters on the structure and chemical composition were investigated. The analysis of thin films was carried out using Energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-Ray Diffraction Analysis (XRD) and Raman spectroscopy methods. It was found that the chemical composition of ScAlSZ thin films was different from the chemical composition of the initial powder. Moreover, the Al concentration in thin films depends on the deposition rate, resulting in a lower concentration using a higher deposition rate. XPS analysis revealed that ZrOx, oxygen vacancies, high concentrations of Al2O3 and metallic Al exist in thin films and influence their structural properties. The crystallinity is higher when the concentration of Al is lower (higher deposition rate) and at higher substrate temperatures. Further, the amount of cubic phase is higher and the amount of tetragonal phase lower when using a higher deposition rate.
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页数:10
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