Electrical Characteristics of Doped Silicon Nanowire Channel Field-Effect Transistor Biosensors

被引：12

作者：

Rim, Taiuk ^{[1
]}

Kim, Kihyun ^{[1
]}

Cho, Hyeonsu ^{[1
]}

Jeong, Wooju ^{[2
]}

Yoon, Jun-Sik ^{[1
]}

Kim, Yumi ^{[1
]}

Meyyappan, M. ^{[3
]}

Baek, Chang-Ki ^{[4
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Creat IT Engn, Future IT Innovat Lab, Pohang 37673, South Korea

[2] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 37673, South Korea

[3] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

[4] Pohang Univ Sci & Technol, Dept Creat IT Engn, Dept Elect Engn, Pohang 37673, South Korea

来源：

IEEE SENSORS JOURNAL | 2017年 / 17卷 / 03期

关键词：

Biosensors; dopamine; field-effect transistor sensors; low-frequency noise; nanowires; resolution; silicon; DOPAMINE; ELECTRODE; SENSORS; CELLS;

D O I：

10.1109/JSEN.2016.2625420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimization of operation conditions for biosensing is investigated for the doped silicon nanowire channel transistor sensors. Sensors with phosphorus doped honeycomb nanowire channel are fabricated on 8-in wafer using the conventional CMOS technology. From the low frequency noise characteristics, the noise equivalent gate voltage fluctuation is obtained to evaluate the sensor resolution and optimize the operation condition. The sensor exhibits maximum resolution at the flat band voltage condition. Detection of a neurotransmitter, dopamine, is demonstrated using the fabricated devices, showing a detection limit of 1 fM and a sensitivity of 2.3 mV/log[dopamine] with a resolution of similar to 60 levels/log[dopamine].

引用

页码：667 / 673

页数：7

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