Temperature dependence of photoluminescence from Γ-Γ and Γ-X minibands in lattice matched InGaAs/InP superlattices

被引：2

作者：

Fernandes dos Santos, L. ^{[1
]}

Pusep, Y. ^{[2
]}

Zanatta, A. R. ^{[2
]}

LaPierre, R. R. ^{[3
]}

机构：

[1] Univ Fed Santa Catarina, BR-88040900 Blumenau, SC, Brazil

[2] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil

[3] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 46期

基金：

加拿大自然科学与工程研究理事会; 巴西圣保罗研究基金会;

关键词：

InGaAs/InP; heterostructures; photoluminescence; QUANTUM-WELL LASERS; BAND-STRUCTURE; SELF-ENERGY; SEMICONDUCTORS; EMISSION; LUMINESCENCE; TRANSISTOR; MODEL; SHIFT; GAP;

D O I：

10.1088/0022-3727/48/46/465101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of temperature on the optical properties of lattice matched InGaAs/InP superlattices are reported. We found that the PL spectra are dominated by the recombination of carriers in the lowest energy minibands formed by Gamma-Gamma and Gamma-X. Effects of temperature on the contribution of each of these minibands are analyzed using two distinct models, proposed by Varshni and Vina. The Debye temperature of the material was estimated to be 356 K and small values of the Varshni parameter a demonstrated that InGaAs/InP superlattices are an attractive system for high operating temperature devices. Additionally, the fit of experimental data by Vina's model provided an estimate of the strength of the exciton-average phonon.

引用

页数：5

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