Study of dual nitridation processes in growth of non-polar a-plane AlGaN epi-layers

被引：9
|
作者：
Zhao, Jianguo [1 ]
Zhang, Xiong [1 ]
Chen, Shuai [1 ]
He, Jiaqi [1 ]
Fan, Aijie [1 ]
Wu, Zili [1 ]
Wang, Shuchang [2 ]
Liu, Yushen [2 ]
Feng, Jinfu [2 ]
Cui, Yiping [1 ]
机构：
[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China
[2] Changshu Inst Technol, Coll Phys & Elect Engn, Changshu 215500, Jiangsu, Peoples R China
来源：
MATERIALS LETTERS | 2018年 / 227卷
关键词：
Semiconductors; Epitaxial growth; Nitridation process; Surfaces; Atomic force microscopy; EPITAXIAL LATERAL OVERGROWTH; GAN;
D O I：
10.1016/j.matlet.2018.05.055
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of dual nitridation processes for both r-plane sapphire and low temperature-grown AlN (LT-AlN) nucleation layer on non-polar a-plane AlGaN epi-layer was studied intensively. A root-meansquare value as small as 1.54 nm for a-plane Al0.53Ga0.47N epi-layer was achieved. It was revealed that the generation of AlN grains as well as the coalescence and recrystallization of LT-AlN islands were the key factors for growing a-plane AlGaN epi-layers with smooth surface morphology. Meanwhile, the evolution of surface morphology with varied nitridation processes and the mechanisms for improving surface morphology of a-plane AlGaN epi-layers were also investigated. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：108 / 111
页数：4
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