Amorphous silicon thin-film transistors-based active-matrix organic light-emitting displays for medical Imaging

被引:4
|
作者
Kim, JH [1 ]
Kanicki, J [1 ]
机构
[1] Univ Michigan, Dept EECS, Solid State Elect Lab, Ann Arbor, MI 48109 USA
关键词
TFT; AM-OP-LED; amorphous silicon; active-matrix; pixel design; fabrication; circuit simulation; organic polymer; light-emitting diode;
D O I
10.1117/12.466933
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
We have developed three hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs)-based pixel electrode circuits for active-matrix organic polymer light-emitting displays (AM-OP-LEDs). Our 3- a-Si:H TFTs voltage driven pixel electrode circuits can supply a continuous output current for AM-OP-LEDs. Each pixel circuit has compensation circuits that can adjusts for the OP-LED and a-Si:H TFTs electrical characteristics shift. This pixel electrode circuit fabricated in our laboratory had the driving output current level of 1.13 muA that is equivalent to a pixel current density of over 20 mA/cm(2). The display brightness of similar to4500 cd/m(2) for green light (540 nm) can be achieved with this type of pixel electrode circuits for the organic polymer light-emitting devices having an external quantum efficiency of 5%.
引用
收藏
页码:314 / 321
页数:2
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