Pseudogap Mediated by Quantum-Size Effects in Lead Islands

被引：43

作者：

Wang, Kedong ^{[2
,4
]}

Zhang, Xieqiu ^{[2
,4
]}

Loy, M. M. T. ^{[2
]}

Chiang, T. -C. ^{[1
,3
]}

Xiao, Xudong ^{[2
,4
]}

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[3] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[4] Chinese Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 07期

关键词：

WELL STATES; PB ISLANDS; SUPERCONDUCTIVITY; PHOTOEMISSION; PHYSICS; FILMS; METAL;

D O I：

10.1103/PhysRevLett.102.076801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling spectroscopy measurements of Pb islands on Si(111) at high energy resolution reveal a novel pseudogap, or a pseudopeak in special cases, around the Fermi level in addition to the usual quantum well states. These gap or peak features persist to temperatures as high as similar to 80 K and are uniquely related to the quantum well nanostructure of the Pb islands. A systematic analysis indicates that electron-phonon scattering is responsible for the observed electronic structure.

引用

页数：4

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