Symmetry breaking of the surface mediated quantum Hall Effect in Bi2Se3 nanoplates using Fe3O4 substrates

被引：12

作者：

Buchenau, Soeren ^{[1
]}

Sergelius, Philip ^{[1
]}

Wiegand, Christoph ^{[1
]}

Baessler, Svenja ^{[1
]}

Zierold, Robert ^{[1
]}

Shin, Ho Sun ^{[2
]}

Ruebhausen, Michael ^{[1
,3
]}

Gooth, Johannes ^{[4
]}

Nielsch, Kornelius ^{[5
]}

机构：

[1] Univ Hamburg, Inst Nanostruct & Solid State Phys, Jungiusstr 11 B, D-20355 Hamburg, Germany

[2] Korea Res Inst Stand & Sci, Mat Genome Ctr, Daejeon 34113, South Korea

[3] Ctr Free Electron Laser Sci, D-22761 Hamburg, Germany

[4] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

[5] IFW Dresden, Inst Metall Mat, Helmholtzstr 20, D-01069 Dresden, Germany

来源：

2D MATERIALS | 2017年 / 4卷 / 01期

关键词：

topological insulator; nanoplate; 2DEG; Hall effect; TOPOLOGICAL INSULATOR; STATES; NANOWIRES; TRANSPORT; MOBILITY; PHASE;

D O I：

10.1088/2053-1583/aa525e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2Se3 nanoplate devices are synthesized on SiO2 and ferrimagnetic insulator substrates. We experimentally demonstrate that ferromagnetism is induced into the bottom surface. The symmetry broken bottom states give rise to an additional Shubnikov-de Haas frequency and leads to a decoupling of the top and bottom quantum Hall effects. We present a three-channel model that separates the bulk, top and bottom surface contributions to the Hall resistance, indicating the presence of two symmetry shifted half-integer QHEs.

引用

页数：7

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