Field-Effect Tunable Epsilon-Near-Zero Perfect Absorbers

被引：0
|
作者：
Anopchenko, Aleksei [1 ]
Tao, Long [1 ]
Lee, Ho Wai Howard [1 ,2 ]
机构：
[1] Baylor Univ, Dept Phys, Waco, TX 76798 USA
[2] Texas A&M Univ, Inst Quantum Sci & Engn, College Stn, TX 77843 USA
来源：
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2017年
关键词：
epsilon-near-zero; conducting oxides; absorber; plasmonics; nanophotonics; ABSORPTION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Perfect absorption due to excitation of bound and radiative modes in ultrathin epsilon-near-zero (ENZ) conducting oxide multilayers is demonstrated. Multilayer absorbers with 8-nm-thin ENZ layers absorb > 95% of light in 1-1.5 mu m wave-length range. Absorption wavelength tuning via field-effect dynamic is discussed.
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页数：2
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