Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

被引:55
|
作者
Ruan, Qiushi [1 ]
Bayazit, Mustafa K. [1 ,2 ]
Kiran, Vankayala [1 ,3 ]
Xie, Jijia [1 ]
Wang, Yiou [1 ,4 ]
Tang, Junwang [1 ]
机构
[1] Solar Energy & Adv Mat Res Grp, Dept Chem Engn, UCL Torrington Pl, London WC1E 7JE, England
[2] Sabanci Univ, Nanotechnol Res & Applicat Ctr, TR-34956 Istanbul, Turkey
[3] BITS Pilani, Dept Chem, KK Birla Goa Campus, Pilani 403726, Goa, India
[4] Ludwig Maximilians Univ Munchen, Nanoinst Munich, Chair Photon & Optoelect, Koniginstr 10, D-80539 Munich, Germany
基金
英国工程与自然科学研究理事会;
关键词
CHARGE-TRANSPORT; WATER; TIO2; PHOTOCATALYST; EVOLUTION;
D O I
10.1039/c9cc03084k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C3N4 film was determined to be ca. 1000 nm.
引用
收藏
页码:7191 / 7194
页数:4
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