Modeling and Simulation of High Gain Monolayer MoS2 Photodetector

被引：0
|
作者：
Chen, Wenchao [1 ]
Yin, Wen-Yan [1 ]
机构：
[1] Coll Informat Sci & Elect Engn, Innovat Inst Electromagnet Informat & Elect Integ, Hangzhou 310058, Zhejiang, Peoples R China
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2016年
关键词：
Monolayer MoS2; Poisson equation; finite difference method; photoresponsivity (PR); PHOTOTRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolayer MoS2 photodetectors are modeled and simulated by self-consistently solving diffusive transport equations in the presence of light illumination with the two-dimensional (2-D) Poisson equation. The simulated results indicate that very high photoresponsivity (PR) of similar to 1000A/W observed in others' experiments is due to strong electrostatic effect of pile up of optically generated holes, and efficient optical absorption. PR is highly dependent on gate bias.
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