High-responsivity MoS2 hot-electron telecom-band photodetector integrated with microring resonator

被引：13
|
作者：
Zhang, Qiao [1 ,2 ]
Ji, Yingke [1 ,2 ]
Hu, Siqi [1 ,2 ]
Li, Zhiwen [1 ,2 ]
Li, Chen [1 ,2 ]
Gu, Linpeng [1 ,2 ]
Tian, Ruijuan [1 ,2 ]
Zhang, Jiachen [1 ,2 ]
Fang, Liang [1 ,2 ]
Zhao, Bijun [1 ,2 ]
Zhao, Jianlin [1 ,2 ]
Gan, Xuetao [1 ,2 ]
机构：
[1] Northwestern Polytech Univ, Sch Phys Sci & Technol, Key Lab Light Field Manipulat & Informat Acquisit, Minist Ind & Informat Technol, Xian 710129, Peoples R China
[2] Northwestern Polytech Univ, Sch Phys Sci & Technol, Shaanxi Key Lab Opt Informat Technol, Xian 710129, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 26期
关键词：
LAYER MOS2; PLASMON; SENSITIVITY;
D O I：
10.1063/5.0093147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems. Published under an exclusive license by AIP Publishing.
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页数：6
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