SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices

被引：16
|
作者：
Chailloux, Thibaut [1 ]
Calvez, Cyril [1 ]
Thierry-Jebali, Nicolas [1 ]
Planson, Dominique [1 ]
Tournier, Dominique [1 ]
机构：
[1] INSA Lyon, Ampere Lab, F-69100 Villeurbanne, France
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
SiC; BJT; MOSFET; JFET; cryogenic temperature; high temperature;
D O I：
10.4028/www.scientific.net/MSF.778-780.1122
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.
引用
收藏
页码：1122 / 1125
页数：4
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