Analyzing Impact of Background Plating from Alkaline Ni bath for Ni-Cu metallization

被引：0
|
作者：
Raval, Mehul C. [1 ]
Joshi, Amruta [1 ]
Solanki, Chetan S. [1 ]
机构：
[1] Indian Inst Technol, Dept Energy Sci & Engn, Natl Ctr Photovolta Res & Educ, Bombay 400076, Maharashtra, India
来源：
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年
关键词：
Background plating; Ni plating; Pseudo fill-factor; Shunt resistance; Suns-V-oc;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Ni-Cu based front contacts for c-Si cells are plated on patterned SiNx, and there could be undesirable background plating leading to shading and shunting losses. In this work, background plating from an alkaline Ni bath is analyzed by Suns-V-oc and Core Scan studies. It has been observed that for plating interval of two minutes, pseudo fill-factor show variations till 67% and average R-sh value was less than half of unprocessed cells. Decrease in R-sh for plating interval of one minute was not as severe as for two minute plating.
引用
收藏
页码：2254 / 2256
页数：3
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